PART |
Description |
Maker |
TISP61089HDM TISP61089HDMR-S |
DUAL FORWARD-CONDUCTING P-GATE THYRISTOR PROGRAMMABLE OVERVOLTAGE PROTECTOR
|
Bourns Electronic Solutions
|
TISP61089AD TISP61089ASD TISP61089D TISP61089SD |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
TISP61089S TISP61089SD TISP61089SDR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd Power Innovations Limited
|
TISP61512P TISP61511D |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
POINN[Power Innovations Ltd] Power Innovations Limited
|
TISP61521D-S TISP61521D TISP61521DR-S TISP61521 TI |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
TISP61089AS |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 双远期导电的P -可编程门晶闸管过压保
|
Power Innovations International, Inc. Power Innovations Limited Power Innovations Ltd
|
TISP61089D TISP61089ASD |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
|
Bourns Inc. Bourns, Inc.
|
TISP61089ADR-S TISP61089SDR-S TISP61089ASDR-S |
SURGE PROT THYRIST 100V NEG SLIC TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 TISP Thyristor Overvoltage Protectors Dual P Gate Forward Conducting TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 PROTECTOR - OVER VOLTAGE TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
|
Bourns, Inc.
|
TISP5080H3BJ TISP5110H3BJ TISP5070H3BJ TISP5150H3B |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 前瞻性导电单向晶闸管过电压保护器
|
Power Innovations International, Inc. POINN[Power Innovations Limited] POINN[Power Innovations Ltd]
|
Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入 Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp. NXP SEMICONDUCTORS
|